SELF-OSCILLATIONS OF CURRENT IN SILICON: PHYSICAL PRINCIPLES, MECHANISMS AND APPLICATION

Please use this identifier to cite or link to this item: http://repo.tma.uz/xmlui/handle/1/126

Full metadata record

DC Field	Value	Language
dc.contributor.author	Nigora Abdullaeva1., Umida Mamadalieva2	-
dc.date.accessioned	2024-11-21T05:36:49Z	-
dc.date.available	2024-11-21T05:36:49Z	-
dc.date.issued	2024	-
dc.identifier.uri	http://repo.tma.uz/xmlui/handle/1/126	-
dc.description.abstract	The article discusses self-oscillatory processes in silicon semiconductor devices, such as diodes and transistors, based on nonlinear effects of interaction of electric current and voltage. Particular attention is paid to the physical mechanisms of self oscillations, including avalanche breakdown, thermal and electrical feedback, as well as their impact on the operation of silicon devices. Examples of the application of self-oscillatory modes in high-frequency signal generators and radio engineering devices are given. Methods for eliminating unwanted oscillations to ensure stable operation of circuits are also discussed.	en_US
dc.language.iso	en_US	en_US
dc.publisher	Journal o Academic Research and Trends in Educational Sciences	en_US
dc.subject	Self-oscillations, Silicon, Avalanche breakdown, Nonlinear effects, Thermal feedback, High-frequency signal generators, Semiconductor devices	en_US
dc.title	SELF-OSCILLATIONS OF CURRENT IN SILICON: PHYSICAL PRINCIPLES, MECHANISMS AND APPLICATION	en_US
dc.type	Article	en_US
Appears in Collections:	Articles

Files in This Item:

File	Description	Size	Format
30.pdf	SELF-OSCILLATIONS OF CURRENT IN SILICON: PHYSICAL PRINCIPLES, MECHANISMS AND APPLICATION	336.65 kB	Adobe PDF	View/Open

DSpace JSPUI