SELF-OSCILLATIONS OF CURRENT IN SILICON: PHYSICAL PRINCIPLES, MECHANISMS AND APPLICATION

Abstract

The article discusses self-oscillatory processes in silicon semiconductor devices, such as diodes and transistors, based on nonlinear effects of interaction of electric current and voltage. Particular attention is paid to the physical mechanisms of self oscillations, including avalanche breakdown, thermal and electrical feedback, as well as their impact on the operation of silicon devices. Examples of the application of self-oscillatory modes in high-frequency signal generators and radio engineering devices are given. Methods for eliminating unwanted oscillations to ensure stable operation of circuits are also discussed.