Abstract:
The article discusses self-oscillatory processes in silicon
semiconductor devices, such as diodes and transistors, based on
nonlinear effects of interaction of electric current and voltage.
Particular attention is paid to the physical mechanisms of self
oscillations, including avalanche breakdown, thermal and
electrical feedback, as well as their impact on the operation of
silicon devices. Examples of the application of self-oscillatory
modes in high-frequency signal generators and radio
engineering devices are given. Methods for eliminating
unwanted oscillations to ensure stable operation of circuits are
also discussed.
